High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

Bruha Raicu; W. Andrew Keenan; Michael I. Current; David Mordo; Roger Brennan

doi:10.1117/12.25726

1 April 1991 High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

Bruha Raicu, W. Andrew Keenan, Michael I. Current, David Mordo, Roger Brennan

Author Affiliations +

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25726
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Ion implanted polysilicon is a key material in CMOS BICMOS and bipolar processing. The evolution of these devices toward the submicron regime has raised new challenges for the technologies of ion implant and rapid thermal processing (RTP) to provide p+ gates and p+ shallow junctions. Rapid thermal annealing of high dose boron implanted polysilicon provides solutions for major problems related to p+ shallow junction formed by furnace and RTP activation of direct implants into single crystal silicon. This work demonstrates how supersaturated polysilicon films with high conductivity fabricated with I/I and RTP can provide uniformly doped p+ gates interconnects and diffusion sources for abrupt shallow p+ junctions. It is an elaboration of earlier work and is covered by a patented technology 16 1.

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Bruha Raicu, W. Andrew Keenan, Michael I. Current, David Mordo, and Roger Brennan "High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25726

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