Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist

Lloyd R. Harriott; Henryk Temkin; C. H. Chu; Yuh-Lin Wang; Y. F. Hsieh; Robert A. Hamm; Morton B. Panish; Harry H. Wade

doi:10.1117/12.47343

1 August 1991 Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist

Lloyd R. Harriott, Henryk Temkin, C. H. Chu, Yuh-Lin Wang, Y. F. Hsieh, Robert A. Hamm, Morton B. Panish, Harry H. Wade

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47343
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The vacuum lithography technique has been extended to the nanometer spatial resolution regime by incorporating a 100 keV focused ion beam system which has a beam diameter of 50 nm or less. A portable vacuum transfer chamber is used so that the sample is maintained on vacuum throughout processing without the processing chambers being directly connected. This process employs focused ion beam pattern writing on an ultrathin surface oxide layer which acts as a mask in a subsequent dry etching step. Molecular beam epitaxy is used to overgrow new epitaxial material on the patterned substrates. Examples of patterning and overgrowth applied to InP/InGaAs heterostructures are described.

Citation Download Citation

Lloyd R. Harriott, Henryk Temkin, C. H. Chu, Yuh-Lin Wang, Y. F. Hsieh, Robert A. Hamm, Morton B. Panish, and Harry H. Wade "Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47343

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