Oxygen plasma etching of silylated resist in top-imaging lithographic process

Han J. Dijkstra

doi:10.1117/12.46407

1 June 1991 Oxygen plasma etching of silylated resist in top-imaging lithographic process

Han J. Dijkstra

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46407
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Oxygen plasma etching of the thin silylated areas in the top-imaging DESIRE process has been studied in a Reactive Ion Etcher (RIE) and in a Distributed Electron Cyclotron Resonance (DECR) etcher. For many RIE process conditions the steady-state model for etching of organosilicon polymers can be used to describe the etch behavior of silylated resist. Deviations from the steady-state model are discussed. It was found that wafer temperature strongly influences the etch rate. After prolonged etching the etch rate of silylated resist increases slowly with time. Rutherford Backscattering Spectroscopy shows that during etching silicon redistribution in the resist occurs. Further, the Si yield per incoming oxygen ion was shown to be pressure dependent. For DECR etching of silylated resist no steady-state behavior was found. The etch rate is not constant, but increases in time. The implications of the etching behavior of silylated resist on pattern formation in the DESIRE process is discussed.

Citation Download Citation

Han J. Dijkstra "Oxygen plasma etching of silylated resist in top-imaging lithographic process", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46407

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