PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
A new method in which electron beam evaporation of titanium and bombardment with 40 keV Xe+ ion beam (Xe+-IBED) were done simultaneously in a N2 gas environment, has been developed to prepared titanium nitride films. It was confirmed that the xenon content in the films is very low and the N to Ti elemental ratios of the films approach unit. The films are mainly composed of TiN polycrystalline. The hardness of the films reaches 2200 kgmm-2, higher than that of films prepared by 40 keV N+-IBED. Moreover, some industrial applications of Xe+-IBED titanium nitride films have been reported.
Xi Wang,Gen Qing Yang,Xiang Huai Liu,Zhi Hong Zheng,Wei-Shi Huang,Zu Yao Zhou, andShichang Zou
"Formation of titanium nitride films by Xe+ ion-beam-enhanced deposition in a N2 gas environment", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47317
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Xi Wang, Gen Qing Yang, Xiang Huai Liu, Zhi Hong Zheng, Wei-Shi Huang, Zu Yao Zhou, Shichang Zou, "Formation of titanium nitride films by Xe+ ion-beam-enhanced deposition in a N2 gas environment," Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47317