Interface properties of a-C:H/a-SiOx:H multilayer

Jing Bao Cui; Wei Ping Zhang; Rong Chuan Fang; Changsui Wang; Guien Zhou; Jian Xin Wu

doi:10.1117/12.47189

1 November 1991 Interface properties of a-C:H/a-SiOx:H multilayer

Jing Bao Cui, Wei Ping Zhang, Rong Chuan Fang, Changsui Wang, Guien Zhou, Jian Xin Wu

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47189
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The a-C:H/SiO_x:H multilayers were prepared by rf magnetron sputtering. Small angle x- ray diffraction, Auger depth profile shows periodicity of the films very well. The interfacial roughness parameters (xi) determined by the x-ray diffraction is 0.49 nm, the interface width d_i obtained from Auger depth profile ranges from 0.78 nm to 1.1 nm. The infrared spectroscopy shows Si-C bond vibration absorption at interface.

Citation Download Citation

Jing Bao Cui, Wei Ping Zhang, Rong Chuan Fang, Changsui Wang, Guien Zhou, and Jian Xin Wu "Interface properties of a-C:H/a-SiOx:H multilayer", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47189

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