Influence of dopants on the electrical transport properties of Pbo.8Sno2Te thin films

Pawan Sikka

doi:10.1117/12.56963

1 February 1992 Influence of dopants on the electrical transport properties of Pb_0.8Sn_0.2Te thin films

Pawan Sikka

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56963
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Thin films of doped and undoped Pbo.8Sno.2Te were grown by flash evaporation onto Kbr and mica substrates kept at 400 degree(s)C. In order to grow doped films, the polycrystalline charge containing different concentrations of indium, thallium, bismuth, and antimony was used. The dc conductivity and Hall coefficient measurements were made on these films. Indium and bismuth doped films were found to be n-type, whereas undoped, thallium and antimony doped films were found to be p-type.

Citation Download Citation

Pawan Sikka "Influence of dopants on the electrical transport properties of Pb_0.8Sn_0.2Te thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56963

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