Paper
1 February 1992 Preparation and characterization of Mn-doped sprayed p-CuInS2 films
R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56971
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
CuInS2, a promising material for tandem solar cell realization, is doped with Mn, a probing dopant for crystal fields and a creator of fluorescent levels in several crystals. 0.7, 1.2 and 1.9 at % of Mn doped p-CuInS2films were prepared by spray pyrolysis. XRD studies confirmed the chalcopyrite structure with C equals 11.02 and a equals 5.51 A. The direct bandgap obtained from transmission spectra was found to increase with Mn content in the range 1.38 - 1.56 eV. Hall effect studies in the temperature range 190 - 273 K showed a decrease of hole concentration with doping indicating the creation of donor levels by Mn.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. P. Vijaya Lakshmi, D. R. Reddy, and B. K. Reddy "Preparation and characterization of Mn-doped sprayed p-CuInS2 films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56971
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KEYWORDS
Manganese

Crystals

Copper indium disulfide

Doping

Tandem solar cells

Temperature metrology

Absorption

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