PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150 degree(s)C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.
Yuanda Cheng,J. Liu,M. B. Stearns, andDaniel Gorman Stearns
"Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51278
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yuanda Cheng, J. Liu, M. B. Stearns, Daniel Gorman Stearns, "Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM," Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51278