Paper
1 December 1992 Planar diffusion-based processes for the fabrication of integrated optical and electronic components
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Abstract
The discovery of the phenomenon of impurity induced layer disordering (IILD) has enabled novel device geometries to be applied to the task of patterning heterostructure layers for the realization of high performance optoelectronic devices. In this paper we will review progress in the various ways of implementing and controlling the IILD process, and discuss several of the potentially important device concepts for optoelectronic integration that are enabled by this technology.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert L. Thornton "Planar diffusion-based processes for the fabrication of integrated optical and electronic components", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321802
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Cited by 1 scholarly publication.
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KEYWORDS
Diffusion

Silicon

Heterojunctions

Optoelectronics

Transistors

Optoelectronic devices

Waveguides

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