Surface contamination control during plasma etching

Hiroshi Miyatake; K. Kawai; Nobuo Fujiwara; Masahiro Yoneda; K. Nishioka; Haruhiko Abe

doi:10.1117/12.56914

1 February 1992 Surface contamination control during plasma etching

Hiroshi Miyatake, K. Kawai, Nobuo Fujiwara, Masahiro Yoneda, K. Nishioka, Haruhiko Abe

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56914
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Reactive ion etching (RIE) is developed by employing NF3 gas in order to avoid the fluorocarbon contamination on the Si surface exposed to the plasma. A high SiO2 etch rate is achieved with magnetically enhanced RIE because of efficient species generation. An anisotropic etching profile of SiO2 is obtained due to the low pressure and low temperature operation. The reaction layers on Si surfaces are investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy. It is found that the NF3 plasma etching is more effective to maintain a clean surface than the CHF3 plasma etching. In addition the photoresist which is used as a mask during via-hole etching is easily removed without any residues by O2 plasma ashing because the fluorocarbon contamination is avoided.

Citation Download Citation

Hiroshi Miyatake, K. Kawai, Nobuo Fujiwara, Masahiro Yoneda, K. Nishioka, and Haruhiko Abe "Surface contamination control during plasma etching", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56914

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