Preparation of low-dislocation density and semi-insulating InP using LEC technique

V. Jagadeesh Kumar; P. Ramasamy; R. Fornari

doi:10.1117/12.636970

16 December 1992 Preparation of low-dislocation density and semi-insulating InP using LEC technique

V. Jagadeesh Kumar, P. Ramasamy, R. Fornari

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636970
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Indium Phosphide is a semiconductor which is very useful for applications in the field of micro and optoelectronics. Growth of InP bulk sin9le crystals by Liquid Encapsulation Czochralski (LEC) is stil a major problem of scientific and technological importance. The lack of a suitable dopant to reduce the EPD without enhancing the number of free carrier concentration has been eliminated by the addition of codopants, namely Cadmium and Sulpihur. In the present work, it will be shown that it is possible to obtain LEC boules having n-type conductivity over the entire crystal length with a distribution of carriers more homogeneous than in crystals doped, for instance with sulphur alone. The doping procedure adopted leads to a good evaluation of the segregation coefficient of Cadmium in InP. The coefficients reported in the literature are so scattered that it is difficult to set accurately the amount of dopant to be added for obtdining the desired doping level. A variety of dopants have been made use of to understand the nature of dopants and their role in the structural and electrical characteristics of the crystal.

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V. Jagadeesh Kumar, P. Ramasamy, and R. Fornari "Preparation of low-dislocation density and semi-insulating InP using LEC technique", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636970

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