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A new resist processing is presented using the carbonization of organic polymer-based resists due to ion beam exposure and a following dry development under O2-RIE conditions. As an example for this process, a negative tone pattern transfer yielding a structure size down to 50 nm is demonstrated. The influence of the ion exposure dose and the O2-RIE conditions on the pattern transfer are discussed in this paper.
Ulrich A. Jagdhold,Wolfgang Pilz,L. M. Buchmann, andM. Torkler
"Novel surface imaging process with ion-beam lithography and dry development", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136035
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Ulrich A. Jagdhold, Wolfgang Pilz, L. M. Buchmann, M. Torkler, "Novel surface imaging process with ion-beam lithography and dry development," Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136035