Correlation of 150-mm silicon wafer site flatness with stepper performance for deep submicron applications

Howard R. Huff; Joseph C. Vigil; Birol Kuyel; David Y. Chan; Long P. Nguyen

doi:10.1117/12.59805

1 June 1992 Correlation of 150-mm silicon wafer site flatness with stepper performance for deep submicron applications

Howard R. Huff, Joseph C. Vigil, Birol Kuyel, David Y. Chan, Long P. Nguyen

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59805
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

An experimental study was conducted to correlate wafer site flatness SFQD with stepper performance for half-micron lines and spaces. CD measurements were taken on wafers patterned on both GCA pre-production XLS i-line and SVGL Micrascan-90 DUV steppers as well as focus measurements on the Micrascan-90. Wafer site flatness SFQD less than 0.3 micrometers was observed to be a sufficiently small variable in CD non-uniformities for these initial half-micron stepper applications.

Citation Download Citation

Howard R. Huff, Joseph C. Vigil, Birol Kuyel, David Y. Chan, and Long P. Nguyen "Correlation of 150-mm silicon wafer site flatness with stepper performance for deep submicron applications", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59805

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