Model for electron-beam metrology algorithm

Dorron D. Levy; Larry Hendler

doi:10.1117/12.59788

1 June 1992 Model for electron-beam metrology algorithm

Dorron D. Levy, Larry Hendler

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59788
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

High accuracy, versatile metrology is essential for achieving quality and yield in the microelectronic industry. In order to measure line width accurately, a model must be created that will equate the output waveform to the surface feature measured. This model requires an understanding of the interaction of the e-beam with the sample, and the cause and effect relationship between surface topography and waveform. In this paper we propose a simplified mechanism based on the surface response of a sample with a finite e-beam. The waveform produced is the result of the convolution of the e-beam with this responsive surface. We show how surface topography affects waveform structure, and then show how knowledge of the structure translates into accurate line width measurements. We introduce a class of secondary electrons called SE4 electrons, whose source is the interaction of BSE from the surface with other portions of the line being measured. Finally, we discuss how charging phenomena and detector efficiency can be integrated into the model to make it more compatible with actual working conditions.

Citation Download Citation

Dorron D. Levy and Larry Hendler "Model for electron-beam metrology algorithm", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59788

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