Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon

Stefan Zollner; Reuben T. Collins; Mark S. Goorsky; P. J. Wang; M. J. Tejwani; J. O. Chu; Bernard S. Meyerson; F. K. LeGoues

doi:10.1117/12.60443

1 July 1992 Photoluminescence from pseudomorphically strained Si/Si_1-xGe_x multiple quantum wells grown on silicon

Stefan Zollner, Reuben T. Collins, Mark S. Goorsky, P. J. Wang, M. J. Tejwani, J. O. Chu, Bernard S. Meyerson, F. K. LeGoues

Author Affiliations +

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60443
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We have grown Si/Sii_Ger multiple quantum wells (r 8%) lattice-matched to silicon with well thicknesses between 3 and 20 nni using UHV-CVD. The sample parameters were obtained accurately with high-resolution X-ray diffraction ( rocking curves) and transmission electron microscopy. From an analysis of the band-edge related photoluminescence energies we find a blue-shift due to confinement for thin wells.

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Stefan Zollner, Reuben T. Collins, Mark S. Goorsky, P. J. Wang, M. J. Tejwani, J. O. Chu, Bernard S. Meyerson, and F. K. LeGoues "Photoluminescence from pseudomorphically strained Si/Si_1-xGe_x multiple quantum wells grown on silicon", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60443

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