Paper
20 November 1992 Ion-induced fabrication of high-quality diamond particles on various substrates
Yusuke Mori, Masahiro Deguchi, Makoto Kitabatake, Hideki Yagi, A. Hatta, T. Ito, Takashi Hirao, Akio Hiraki
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Abstract
Effect of carbon implantation prior to diamond growth on diamond nucleations has been investigated for various substrates such as Si, Cu, Ti, Ni and Fe. The nucleation density is increased by one order of magnitude for carbonimplanted Si substrate via microwave plasma CVD. The diamond particles grown show well-defined (100) and (111) facets without twins or secondary nucleations. An enhancement of diamond nucleations by two orders of magnitude for carbon-implanted Cu and Ti substrates has been observed via magnet-active plasma CVD. The implanted carbon atoms seem to act as nuclei for diamond growth.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yusuke Mori, Masahiro Deguchi, Makoto Kitabatake, Hideki Yagi, A. Hatta, T. Ito, Takashi Hirao, and Akio Hiraki "Ion-induced fabrication of high-quality diamond particles on various substrates", Proc. SPIE 1759, Diamond Optics V, (20 November 1992); https://doi.org/10.1117/12.130757
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Diamond

Carbon

Chemical vapor deposition

Particles

Plasma

Silicon

Silicon carbide

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