Integration of GaAs LEDs with silicon circuits by epitaxial lift-off

Ali Ersen; Eli Yablonovitch; Tom J. Gmitter; Itzhak Schnitzer

doi:10.1117/12.147102

1 July 1993 Integration of GaAs LEDs with silicon circuits by epitaxial lift-off

Ali Ersen, Eli Yablonovitch, Tom J. Gmitter, Itzhak Schnitzer

Proceedings Volume 1849, Optoelectronic Interconnects; (1993) https://doi.org/10.1117/12.147102
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Epitaxial liftoff has emerged as a viable technique to integrate GaAs with silicon. The technique relies on the separation of a thin epi-GaAs film from its substrate followed by direct bonding of the thin film to a silicon substrate. The silicon substrate has to meet certain planarity and smoothness conditions in order to obtain high quality bonding. Unfortunately, processed silicon IC chips do not satisfy these conditions. In this paper, we report on the results of two different planarization techniques, plasma etch back and chemical mechanical polishing, to integrate GaAs LEDs with silicon circuits using epitaxial liftoff. A 4 by 8 array of GaAs LEDs have been integrated with silicon driver circuits using plasma etch back. We also have lifted off areas as large as 500 mm² and bonded them on five inch device wafers by chemical mechanical polishing.

Citation Download Citation

Ali Ersen, Eli Yablonovitch, Tom J. Gmitter, and Itzhak Schnitzer "Integration of GaAs LEDs with silicon circuits by epitaxial lift-off", Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); https://doi.org/10.1117/12.147102

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