Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Bernard Pierre Orsal; Jean-Marie Peransin; K. Daulasim; Philippe Signoret; Pascal Y. Devoldere; M. Robinet; Mitsuo Fukuda

doi:10.1117/12.146909

16 June 1993 Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Bernard Pierre Orsal, Jean-Marie Peransin, K. Daulasim, Philippe Signoret, Pascal Y. Devoldere, M. Robinet, Mitsuo Fukuda

Author Affiliations +

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146909
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

The longitudinal mode hopping and the related terminal electrical noise in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated. It is found that electrical mode hopping has a Lorentzian dependence. The correlation with the optical noise is experimentally shown for low and medium frequencies.

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Bernard Pierre Orsal, Jean-Marie Peransin, K. Daulasim, Philippe Signoret, Pascal Y. Devoldere, M. Robinet, and Mitsuo Fukuda "Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146909

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