CW Laser Annealing Of Ion-Implanted Silicon

L. D. Hess; R. A. Forber; S. A. Kokorowski; G. L. Olson

doi:10.1117/12.958017

24 January 1980 CW Laser Annealing Of Ion-Implanted Silicon

L. D. Hess, R. A. Forber, S. A. Kokorowski, G. L. Olson

Proceedings Volume 0198, Laser Applications in Materials Processing; (1980) https://doi.org/10.1117/12.958017
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

Experimental measurements and theoretical calculations of recrystallization induced by single laser scans over amorphous silicon are reported and quantitatively compared. The details of laser-induced crystal regrowth of high dose ion implanted silicon studied over a wide range of experimental parameters are accurately predicted from three dimensional thermal transport considerations and solid phase epitaxial crystal growth. Best agreement between theory and experiment is obtained with the value of 2.24 eV for the activation energy of recrystallization.

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L. D. Hess, R. A. Forber, S. A. Kokorowski, and G. L. Olson "CW Laser Annealing Of Ion-Implanted Silicon", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958017

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