IV-VI on fluoride/Si structures for IR-sensor-array applications

Alexander Fach; Clau Maissen; Jiri Masek; Stefan I. Teodoropol; Hans Zogg; Harald Boettner

doi:10.1117/12.162784

19 November 1993 IV-VI on fluoride/Si structures for IR-sensor-array applications

Alexander Fach, Clau Maissen, Jiri Masek, Stefan I. Teodoropol, Hans Zogg, Harald Boettner

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162784
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg_1-xCd_xTe for infrared-focal plane arrays (IRFPA) with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic IV- VI-on-active-Si IR-FPA: (1) Up to now, compatibility with the Si-substrate was reached through use of a stacked CaF₂/BaF₂ buffer layer, this layer is replaced by a very thin CaF₂ buffer only, which is more suitable for photolithographic processing; (2) fine resolution wet etching of the IV-VI layers is much easier and reproducible with this new type of buffer; and (3) etching of the surface was found to improve the behavior of the blocking Pb-contact towards better I-V characteristics.

Citation Download Citation

Alexander Fach, Clau Maissen, Jiri Masek, Stefan I. Teodoropol, Hans Zogg, and Harald Boettner "IV-VI on fluoride/Si structures for IR-sensor-array applications", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162784

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