656 x 492-element platinum silicide infrared charge-coupled-device focal-plane array

Youssef S. Abedini; Oliver R. Barrett; Jae S. Kim; David D. Wen; Shirley S. Yeung

doi:10.1117/12.160568

1 November 1993 656 x 492-element platinum silicide infrared charge-coupled-device focal-plane array

Youssef S. Abedini, Oliver R. Barrett, Jae S. Kim, David D. Wen, Shirley S. Yeung

Proceedings Volume 2020, Infrared Technology XIX; (1993) https://doi.org/10.1117/12.160568
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

A monolithic PtSi charge coupled device (CCD) focal plane array (FPA) has been developed. The array contains 656 X 492 pixels with 46% fill-factor and 26.5 micrometers square pitch. A single on-chip amplifier is used to read out the video at 12.5 MHz to provide standard 30 frames per second format. The devices are produced in Loral Fairchild's CCD facility in Milpitas, California. Excellent performance and yield have been achieved from initial wafers. Device design and performance test results are described.

Citation Download Citation

Youssef S. Abedini, Oliver R. Barrett, Jae S. Kim, David D. Wen, and Shirley S. Yeung "656 x 492-element platinum silicide infrared charge-coupled-device focal-plane array", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160568

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