Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon

Lawrence T. Ho; F. Y. Lin; W. J. Lin

doi:10.1117/12.166627

31 January 1994 Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon

Lawrence T. Ho, F. Y. Lin, W. J. Lin

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166627
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

The group-II element beryllium when introduced into silicon forms more than one acceptor center. Their infrared absorption spectra have been investigated using a high-resolution FTIR spectrometer.

Citation Download Citation

Lawrence T. Ho, F. Y. Lin, and W. J. Lin "Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166627

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