Paper
31 January 1994 Fourier transform infrared spectroscopy as an analytical tool for etching investigations of silicon
Andreas E. Guber, Uwe Koehler, W. Bier
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Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166615
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
Silicon and its compounds (SiO2, Si3N4) were etched for microelectronic or micromechanical applications using different methods such as plasma etching processes, laser induced etching, or plasmaless etching processes. In our experiments, halogen containing gases, e.g., molecular fluorine or chlorine and interhalogen compounds such as JF5 or ClF3 were used as etching agents. Some of the initial gases (JF5 ClF3) and most of the reaction products (SiF4, SiCl4, ClF3, ClF) are infrared active. For this reason, online FTIR spectroscopy was applied as the analytical method during our static investigations on plasmaless and laser induced etching.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas E. Guber, Uwe Koehler, and W. Bier "Fourier transform infrared spectroscopy as an analytical tool for etching investigations of silicon", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166615
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Silicon

FT-IR spectroscopy

Plasma etching

Gases

Fluorine

Semiconductor lasers

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