Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers

Brian W. Gregory; Susan Stephens; Richard A. Dluhy; Sajan Thomas; John Stickney; Lawrence A. Bottomley

doi:10.1117/12.166681

31 January 1994 Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers

Brian W. Gregory, Susan Stephens, Richard A. Dluhy, Sajan Thomas, John Stickney, Lawrence A. Bottomley

Author Affiliations +

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166681
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

We have investigated whether large ATR crystals of Ge can be made atomically flat and resistant to atmospheric oxidation, thus enabling us to use them simultaneously as an IR- transparent ATR waveguide and a scanning probe conducting substrate. A protocol has been developed for producing atomically flat Ge substrates resistant to oxidation; this method involves UHV annealing and the electrochemical deposition of a well-ordered, passivating atomic layer of tellurium (Te) onto the Ge surface in order to eliminate further reoxidation of the clean, ordered, Ge substrate. We have obtained STM images in air of the Ge:Te surface and found no sign of disordered oxide formation. IR spectroscopy of monolayer films transferred onto the Sb-doped Ge crystal show little difference with spectra obtained from normal, monocrystalline Ge ATR crystals.

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Brian W. Gregory, Susan Stephens, Richard A. Dluhy, Sajan Thomas, John Stickney, and Lawrence A. Bottomley "Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166681

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