Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

Otte J. Homan; John E. Epler; Bruce D. Patterson; Hans W. Lehmann

doi:10.1117/12.180962

28 July 1994 Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

Otte J. Homan, John E. Epler, Bruce D. Patterson, Hans W. Lehmann

Proceedings Volume 2213, Nanofabrication Technologies and Device Integration; (1994) https://doi.org/10.1117/12.180962
Event: Integrated Optoelectronics '94, 1994, Lindau, Germany

Abstract

Aluminum-oxide thermally grown into high Al-concentration Al_xGa_1-xAs layers has recently been studied extensively. The material shows electrical and optical properties that make it useful in a semiconductor laser fabrication process where it can provide electrical isolation and optical guiding, as well as simplify the fabrication and integration process considerably. We use this thermal oxide to produce GaAs/AlGaAs semiconductor lasers that can be integrated with other devices. The GaAs cap- layer is masked with photoresist and the exposed GaAs areas are etched away, leaving a GaAs oxidation mask on the AlGaAs upper cladding layer. Using N₂ carrier gas saturated with H₂O vapor, the uncovered Al_0.8Ga_0.2As material is converted into a stable aluminum-oxide at temperatures around 450 degree(s)C. Due to the near-isotropic oxidation an `ellipsoidal' diffusion front is created, which is in strong contrast to the well-known mesa cross-section in conventional dry-etched ridge-waveguides but is more similar to e.g. wet-etched buried heterostruture lasers.

Citation Download Citation

Otte J. Homan, John E. Epler, Bruce D. Patterson, and Hans W. Lehmann "Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs", Proc. SPIE 2213, Nanofabrication Technologies and Device Integration, (28 July 1994); https://doi.org/10.1117/12.180962

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