Preparation and photoluminescence of sol-gel-derived Ge-nanocrystals-doped SiO2 glasses

Masayuki Nogami; Toshihiro Kasuga; Yoshihiro Abe

doi:10.1117/12.188951

13 October 1994 Preparation and photoluminescence of sol-gel-derived Ge-nanocrystals-doped SiO₂ glasses

Masayuki Nogami, Toshihiro Kasuga, Yoshihiro Abe

Proceedings Volume 2288, Sol-Gel Optics III; (1994) https://doi.org/10.1117/12.188951
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Ge nanocrystal-embedded SiO₂ glasses were successfully prepared by a sol-gel process. The glasses synthesized through hydrolysis of Si(OC₂H₅)₄ and GeCl₄ were heated in the presence of hydrogen at 400 to 700 degree(s)C, in which Ge⁴⁺ ions were reduced to precipitate nanosized Ge crystals. Glasses doped with Ge nanocrystals of a diameter of approximately 5 nm showed the optical absorption edge at approximately 2.5 eV and a strong room temperature photoluminescence with peaks at 2.35, 2.15 eV and weak at 1.85 eV. Large Ge crystals precipitated by heating above 800 degree(s)C showed no photoluminescence.

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Masayuki Nogami, Toshihiro Kasuga, and Yoshihiro Abe "Preparation and photoluminescence of sol-gel-derived Ge-nanocrystals-doped SiO₂ glasses", Proc. SPIE 2288, Sol-Gel Optics III, (13 October 1994); https://doi.org/10.1117/12.188951

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