Electroluminescence properties of bipolar resonant tunneling diode

Hanyu Sheng; Soo-Jin Chua

doi:10.1117/12.182138

5 August 1994 Electroluminescence properties of bipolar resonant tunneling diode

Hanyu Sheng, Soo-Jin Chua

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182138
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

An electroluminescence model of bipolar resonant tunneling diode is carried out. The current is the sum of electron and hole current. The electron and hole density at resonant level of quantum well are related with the electron and hole current respectively. Radiative recombination rate formula is derived from matrix element, electrons and holes distribution. Result shows the large on-off ratio of light output can be achieved by the bipolar resonant tunneling diode.

Citation Download Citation

Hanyu Sheng and Soo-Jin Chua "Electroluminescence properties of bipolar resonant tunneling diode", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182138

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