Paper
3 March 1995 Diffusion properties of ion-implanted species in selected target materials
G. D. Alton, J. Dellwo, H. K. Carter, J. Kormicki, G. di Bartolo, J. C. Batchelder, J. Breitenbach, J. Alexander Chediak, K. Jentoff-Nilsen, S. Ichikawa
Author Affiliations +
Proceedings Volume 2339, International Conference on Neutrons and Their Applications; (1995) https://doi.org/10.1117/12.204175
Event: 4th International Conference on Applications of Nuclear Techniques: Neutrons and their Applications, 1994, Crete, Greece
Abstract
Experiments designed to select the most appropriate target material for generating a particular radioactive ion beam (RIB) are in progress at the Oak Ridge National Laboratory. They are important to the future success of the Holifield Radioactive Ion Beam Facility (HRIBF). The 25-MV HHIRF tandem accelerator is used to implant stable complements of interesting radioactive elements into refractory targets mounted in a high-temperature FEBIAD ion source which is `on-line' at the UNISOR facility. The intensity versus time of implanted species, which diffuse from the high-temperature target material (approximately equals 1700 degree(s)C) and are ionized in the FEBIAD ion source, is used to determine release times for a particular projectile/target material combination. From such release data, diffusion coefficients can be derived by fitting the theoretical results obtained by computational solution of Fick's second equation to experimental data. The diffusion coefficient can be used subsequently to predict the release properties of the particular element from the same material in other target geometries and at other temperatures, provided that the activation energy is also known. Diffusion coefficients for Cl implanted into and diffused from CeS and Zr5Si3 and As, Br, and Se implanted into and diffused from Zr5Ge3 have been derived from the resulting intensity versus time profiles. Brief descriptions of the experimental apparatus and procedures utilized in the present experiments and plans for future related experiments are also presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. D. Alton, J. Dellwo, H. K. Carter, J. Kormicki, G. di Bartolo, J. C. Batchelder, J. Breitenbach, J. Alexander Chediak, K. Jentoff-Nilsen, and S. Ichikawa "Diffusion properties of ion-implanted species in selected target materials", Proc. SPIE 2339, International Conference on Neutrons and Their Applications, (3 March 1995); https://doi.org/10.1117/12.204175
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KEYWORDS
Information operations

Diffusion

Chemical species

Ions

Adsorption

Chemical elements

Tantalum

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