Paper
26 October 1994 Anomaly of the electrical properties for CoMnNiO nanocrystalline thin film
Hui Tan, Mingde Tao, Shigeng Song
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190729
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
When annealed at various temperature the amorphous film of CoMnNiO deposited by R.F. Sputtering transforms into nano-crystalline and polycrystalline, and grain size increases with increasing annealing temperature and time. The study indicated that the resistivity of the nano-crystalline films is lot bigger than of the amorphous and ploycrystalline films, and the relations of material constant (B) to temperature (T) for the nano-films were peculiar. It was suspected that anomaly of the electrical properties relate to higher density of the grain boundary in the nano-film.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Tan, Mingde Tao, and Shigeng Song "Anomaly of the electrical properties for CoMnNiO nanocrystalline thin film", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190729
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KEYWORDS
Crystals

Resistance

Annealing

Thin films

Chemical species

Ions

Transform theory

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