Deposition of thin films by ion-assisted processes

Philip J. Martin; Xi Wang; A. Bendavid; T. J. Kinder

doi:10.1117/12.190802

26 October 1994 Deposition of thin films by ion-assisted processes

Philip J. Martin, Xi Wang, A. Bendavid, T. J. Kinder

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190802
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

The properties of thin films may be enhanced greatly when the depositing atoms are subjected to low energy ion bombardment. The arc evaporation process offers the possibility of intrinsic self bombardment due to the high percentage of low energy ionized material present in the evaporant. The main restriction of microdroplets of cathode material also present in arc evaporation may be overcome by means of magnetic filtering enabling the deposition of high quality carbon, carbon nitride and TiN films. Furthermore, when the depositing metal ions are bombarded with energetic gaseous ions, the mechanical properties and stoichiometry of the films may be controlled further. The technique of Ion Assisted Arc Deposition (IAAD) permits the synthesis of hard materials including TiN onto ambient temperature substrates.

Citation Download Citation

Philip J. Martin, Xi Wang, A. Bendavid, and T. J. Kinder "Deposition of thin films by ion-assisted processes", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190802

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