Valence-band offsets at strained semiconductor heterojunctions

Jianjun Xie; Dong Lu

doi:10.1117/12.190768

26 October 1994 Valence-band offsets at strained semiconductor heterojunctions

Jianjun Xie, Dong Lu

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190768
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Valence-band offsets at lattice mismatched semiconductor heterojunctions are studied by using the interface-bond-polarity model with tight-binding approximation. The interface dipoles for lattice mismatched (001) III-V/IV heterojunctions are calculated based on the polarity of individual bond. It is found that the valence-band discontinuities depend strongly upon both of the strain conditions and the interface bond structures. An improved agreement of the calculated valence-band offsets with that of experimental measurement can be obtained by taking account of the strain effect and the interface dipole correction simultaneously.

Citation Download Citation

Jianjun Xie and Dong Lu "Valence-band offsets at strained semiconductor heterojunctions", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190768

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