Simulation of photomodulation effects on semiconductor interfaces and metal-semiconductor contacts for photoreflectance spectroscopy

Alireza Badakhshan; P. Thompson; Philip Cheung

doi:10.1117/12.212483

19 June 1995 Simulation of photomodulation effects on semiconductor interfaces and metal-semiconductor contacts for photoreflectance spectroscopy

Alireza Badakhshan, P. Thompson, Philip Cheung

Author Affiliations +

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212483
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We describe simulation of photon-induced modulation to understand the interface effects on the optical response of a low doped GaAs layer. We also present measured photoreflectance lineshapes from low doped (1 to 3 X 10¹⁶ cm ^-3) GaAs layers with different interfaces. These layers are GaAs; with a semi-transparent gold overlayer, with a heavily doped underlayer and an air exposed single layer. A comparison between the simulation and the experimental lineshape indicates three possible photomodulation mechanisms, each with its own characteristic lineshape. This work shows that it is essential to use a multilayer model in simulation in order to accound for the slight gradient in optical response of successive nanometer scale sublayers within a single layer of the material. In this study the gradient is caused by changes in the electric field within the space-charge region, which affects the optical response of the sample. We found that the details of photoreflectance lineshape of each layer depends on the electrical and structural parameters of its immediate interfaces and the electrical characteristics of its neighboring layers.

Citation Download Citation

Alireza Badakhshan, P. Thompson, and Philip Cheung "Simulation of photomodulation effects on semiconductor interfaces and metal-semiconductor contacts for photoreflectance spectroscopy", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212483

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