Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing

Qiang Liu; Harry E. Ruda; Lech Z. Jedral; Ivoil P. Koutzarov; Chandima D. Edirisinghe

doi:10.1117/12.206285

10 April 1995 Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing

Qiang Liu, Harry E. Ruda, Lech Z. Jedral, Ivoil P. Koutzarov, Chandima D. Edirisinghe

Author Affiliations +

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206285
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of C_As and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced C_As related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.

Citation Download Citation

Qiang Liu, Harry E. Ruda, Lech Z. Jedral, Ivoil P. Koutzarov, and Chandima D. Edirisinghe "Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206285

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