Laser chemical etching of copper films

A. Aliouchouche; Jacques Boulmer; D. Debarre; B. Bourguignon; Jean-Pierre Budin

doi:10.1117/12.206272

10 April 1995 Laser chemical etching of copper films

A. Aliouchouche, Jacques Boulmer, D. Debarre, B. Bourguignon, Jean-Pierre Budin

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206272
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Copper surface interactions with chlorine and carbon tetrachloride and a UV excimer laser are studied, in the context of applications to interconnects in microelectronic circuits. With Cl₂, a highly reactive gas, the etching process is governed by bulk diffusion. With CCl₄, which is less reactive, the limiting step is the creation of reactive species at the surface. The diffusion of active species in the gas phase is evidenced by a degree of nonuniformity of mm-sized etched spots.

Citation Download Citation

A. Aliouchouche, Jacques Boulmer, D. Debarre, B. Bourguignon, and Jean-Pierre Budin "Laser chemical etching of copper films", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206272

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