Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization

Hiroshi Ito; Gregory Breyta; Donald C. Hofer; Thomas Fischer; R. Bruce Prime

doi:10.1117/12.210353

9 June 1995 Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization

Hiroshi Ito, Gregory Breyta, Donald C. Hofer, Thomas Fischer, R. Bruce Prime

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210353
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The stabilization toward airborne contamination of chemical amplification resists can be achieved by annealing to reduce the free volume of resist films. Our new positive resist consisting of a thermally and hydrolytically stable polymer and acid generator can be baked above its glass transition temperature and is thus environmentally stable. However, the high temperature bake processes place a stringent demand on the selection of the acid generator (and of course on the resist polymer). In addition to the airborne contamination, evaporation of acid generators and/or photochemically generated acids during the bake processes can result in the T-top formation, especially when the acid generator is small in size and the bake temperatures are high. This paper describes the thermal stability of several acid generators and the influence of the acid generator structure on the T-top formation in our environmentally stable chemically amplified positive resist. The careful selection of a bulky acid generator provided excellent 0.25 micrometers lithography with the depth-of-focus of 1.2 micrometers and the exposure latitude of 20%.

Citation Download Citation

Hiroshi Ito, Gregory Breyta, Donald C. Hofer, Thomas Fischer, and R. Bruce Prime "Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210353

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