CO2 laser-photosensitized decomposition of diethylsilane for deposition of SixC1-x coatings

M. Jakoubkova; Z. Bastl; J. Subrt; D. Cukanova; Radek Fajgar; Josef Pola

doi:10.1117/12.203524

8 March 1995 CO₂ laser photosensitized decomposition of diethylsilane for deposition of Si_xC_1-x coatings

M. Jakoubkova, Z. Bastl, J. Subrt, D. Cukanova, Radek Fajgar, Josef Pola

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203524
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

CO₂ laser photosensitized (SF₆) decomposition of diethylsilane proceeds via molecular extrusion of ethene and affords solid Si/C/H materials which possess both Si-C and Si contributions, contain some fluorine from the sensitizing sulphur hexafluoride, and react with ambient atmosphere to incorporate oxygen.

Citation Download Citation

M. Jakoubkova, Z. Bastl, J. Subrt, D. Cukanova, Radek Fajgar, and Josef Pola "CO₂ laser photosensitized decomposition of diethylsilane for deposition of Si_xC_1-x coatings", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203524

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