Extrinsic semiconductor low-background infrared field-effect transistor of a new type

Nicolas B. Zaletaev; Vasily F. Kocherov

doi:10.1117/12.221389

29 September 1995 Extrinsic semiconductor low-background infrared field-effect transistor of a new type

Nicolas B. Zaletaev, Vasily F. Kocherov

Author Affiliations +

Proceedings Volume 2553, Infrared Spaceborne Remote Sensing III; (1995) https://doi.org/10.1117/12.221389
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

An extrinsic semiconductor IR field-effect transistor of a new type has been developed and studied. It operates in a spectral range corresponding to its bulk material extrinsic photoresponsivity and possesses a quantum efficiency on the order of that of the same material photoconductor detectors. Its principle of operation is based on the variation of the near- contact electric field on a change in the concentration of free charge carriers in the bulk. A low-frequency current responsivity of 10⁶-10⁷ A/W for experimental SI:Ga samples has been attained under a background intensity of 10¹¹ cm^-2s^-1. The low-frequency responsivity changes in inverse proportion to the level of background and can achieve a very high value with a decrease in it. The 3-dB cutoff frequency of photoresponse is close to the cutoff frequency of the low- frequency photoresponse plateau for the similar photoconductor detectors. A physical model has been developed which makes it possible to carry out approximate designing of such devices. Experimental samples of 16-element phototransistor linear arrays have been developed.

Citation Download Citation

Nicolas B. Zaletaev and Vasily F. Kocherov "Extrinsic semiconductor low-background infrared field-effect transistor of a new type", Proc. SPIE 2553, Infrared Spaceborne Remote Sensing III, (29 September 1995); https://doi.org/10.1117/12.221389

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