HEL (High-Energy Laser) Silicon Component Technology

Terry V. Roszhart; Herman Vogel; Dave Shemwell; Matthew Miller; Robert McIntosh

doi:10.1117/12.931732

15 September 1981 HEL (High-Energy Laser) Silicon Component Technology

Terry V. Roszhart, Herman Vogel, Dave Shemwell, Matthew Miller, Robert McIntosh

Proceedings Volume 0270, High Power Lasers and Applications; (1981) https://doi.org/10.1117/12.931732
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Single crystal silicon exhibits thermal, mechanical, optical, and fabrication properties appropriate for the requirements of HEL (High-Energy Laser), component technology. As a material, single crystal silicon offers low thermal expansion, low density, high thermal conductivity and high heat capacity which yield a thermal/mechanical high power deformation response that is superior to Mo, Be, WC and other mirror candidate materials. In addition, silicon's crystal structure can be used to produce periodic, sharply defined geometrical shapes in certain crystallographic planes through Preferential Chemical Etching (PCE). By properly combining this action with specific photoresist exposure and development techniques, coolant channels and other critical structures related to HEL component fabrication may be produced accurately. Silicon also can be polished to a low microroughness, yielding surfaces with low scatter and high damage resistance. These advantages apply to both CW and pulsed modes of operation, providing the potential for high quality operation at short as well as long wavelengths.

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Terry V. Roszhart, Herman Vogel, Dave Shemwell, Matthew Miller, and Robert McIntosh "HEL (High-Energy Laser) Silicon Component Technology", Proc. SPIE 0270, High Power Lasers and Applications, (15 September 1981); https://doi.org/10.1117/12.931732

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KEYWORDS

Silicon

Crystals

Mirrors

Fabrication

Silicon carbide

Molybdenum

Polishing

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