1.54-um emission enhancement in silicon doped with erbium

D. E. Onopko; Nikolai T. Bagraev; Alexander I. Ryskin

doi:10.1117/12.229153

3 January 1996 1.54-um emission enhancement in silicon doped with erbium

D. E. Onopko, Nikolai T. Bagraev, Alexander I. Ryskin

Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229153
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation

Abstract

The electronic structure of the silicon crystals doped with erbium in the melt during the crystal growth and by ion implantation method is demonstrated to be responsible for the formation of the erbium bonds with three or two ligands which result in the trigonal and orthorhombic deep centers, respectively. The resonance in the energies of the Er²⁺/Er³⁺ deep level and the ⁴I_15/2 yields ⁴I_13/2 intracenter transition for the Er³⁺ ion is shown to enhance the 1.54 micrometer intracenter luminescence because of the auger process excitation.

Citation Download Citation

D. E. Onopko, Nikolai T. Bagraev, and Alexander I. Ryskin "1.54-um emission enhancement in silicon doped with erbium", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229153

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