Paper
24 July 1996 Ta-Si-O absorptive shifter for the attenuated phase-shifting mask
Y. S. Yan, C. C. Cheng, C. L. Lin, J. Y. Gan, T. B. Wu, Laurent C. Tuo, Jia-Jing Wang
Author Affiliations +
Abstract
Ta-Si-O composite films have been developed for the single-layer attenuated phase-shifting mask (A.PSM). The films were deposited in an reactive-sputtering system with separating Ta and Si guns. The refractive index and the extinction coefficient of films were tuned by changing the oxygen flow rate and gun power of each gun. At the optimum condition, films with the required optical properties for APSM has been obtained. The films obtained will produce π-shift transmittance around 7% for both i-line and DUV lithography, and less than 25% of transmittance at 488 nm which is important for defect inspection. In addition, the films appear to be inert to hot sulfuric acid which is also important in mask cleaning. Together, Ta-Si-O composite film is expected to be a promising material of DUV absorptive shifter.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. S. Yan, C. C. Cheng, C. L. Lin, J. Y. Gan, T. B. Wu, Laurent C. Tuo, and Jia-Jing Wang "Ta-Si-O absorptive shifter for the attenuated phase-shifting mask", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245212
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Cited by 2 scholarly publications.
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KEYWORDS
Transmittance

Oxygen

Photomasks

Refractive index

Tantalum

Phase shifts

Silicon

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