Paper
12 July 1996 Thermomechanical analysis in directional solidification of CdTe
Frederick M. Carlson, Taipao Lee, John C. Moosbrugger, David J. Larson Jr.
Author Affiliations +
Abstract
Thermoelastic calculations for CdTe grown by the vertical Bridgman method are presented. Finite element calculations are verified by some experimental data. Solidification interface velocity, charge temperature and stress distributions are computed for prescribed ampoule withdrawal rates and several ampoule support systems. The support systems include various materials and seed-wafer transition zone geometries. Crystal stress in excess of the critical resolved shear stress is used as the figure of merit to judge the performance of a particular system. Emphasis is focused on the transition region between the seed and wafer. A processing strategy is proposed and desirable support system characteristics are presented.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frederick M. Carlson, Taipao Lee, John C. Moosbrugger, and David J. Larson Jr. "Thermomechanical analysis in directional solidification of CdTe", Proc. SPIE 2809, Space Processing of Materials, (12 July 1996); https://doi.org/10.1117/12.244328
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KEYWORDS
Interfaces

Crystals

Solids

Quartz

Computing systems

Synchrotrons

Temperature metrology

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