Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches

Frank A. Hegmann; Mark S. Sherwin

doi:10.1117/12.262736

18 December 1996 Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches

Frank A. Hegmann, Mark S. Sherwin

Proceedings Volume 2842, Millimeter and Submillimeter Waves and Applications III; (1996) https://doi.org/10.1117/12.262736
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

A source of high-intensity, picosecond-to-nanosecond far-IR pulses has been developed at the UCSB Center for Free- Electron Laser Studies. The microsecond-long, far-IR output of the UCSB free-electron laser is sliced into shorter pulses using laser-activated semiconductor reflection switches. We have observed pulse durations as short as 20 ps at 22 cm^-1. An overview of the design and performance of the pulse-slicer system is given.

Citation Download Citation

Frank A. Hegmann and Mark S. Sherwin "Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262736

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