Paper
13 May 1997 Microstructural and dielectric susceptibility effects on predictions of dielectric properties
Author Affiliations +
Abstract
In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interaction s differentiate the usual modeling formalism and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment to of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kim F. Ferris, Gregory J. Exarhos, and Steven M. Risser "Microstructural and dielectric susceptibility effects on predictions of dielectric properties", Proc. SPIE 2966, Laser-Induced Damage in Optical Materials: 1996, (13 May 1997); https://doi.org/10.1117/12.274236
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Cited by 1 scholarly publication.
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KEYWORDS
Dielectrics

Composites

3D modeling

Dielectric polarization

Chemical elements

Systems modeling

Finite element methods

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