Progress in normal-incidence III-V quantum well infrared photodetectors

Elias Towe; R. H. Henderson; Stephen W. Kennerly

doi:10.1117/12.264206

22 January 1997 Progress in normal-incidence III-V quantum well infrared photodetectors

Elias Towe, R. H. Henderson, Stephen W. Kennerly

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264206
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Intersubband transitions in GaAs/(Al,Ga)As quantum wells have been successfully used in the design of novel infrared detectors for over a decade now. Both conduction- and valence-band based detectors have been investigated. In general, the conduction-band based detectors fabricated from direct gap GaAs/(Al,Ga)As heterostructures are not sensitive to normal-incidence light. This is a consequence of the quantum mechanical rules that govern light absorption in these structures. In order to detect normal-incidence light, a grating structure which scatters the incident light into higher order, transverse magnetic modes is used. To avoid the use of gratings, research is being carried out in (In,Ga,Al)As/(Al,Ga)As conduction-band quantum well structures that can absorb normal-incidence light. This paper reviews recent progress in such detectors.

Citation Download Citation

Elias Towe, R. H. Henderson, and Stephen W. Kennerly "Progress in normal-incidence III-V quantum well infrared photodetectors", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264206

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KEYWORDS

Quantum wells

Sensors

Absorption

Photodetectors

Infrared sensors

Gallium arsenide

Magnetism

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