Paper
27 December 1996 Preparation of Ti:sapphire thin films on sapphire substrates by XeCl excimer laser ablation
Peter A. Atanasov, Rumen I. Tomov, Anna O. Dikovska, Zdravka I. Aneva, Vasilka Tsaneva, Zahari Y. Peshev
Author Affiliations +
Proceedings Volume 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications; (1996) https://doi.org/10.1117/12.262953
Event: Ninth International School on Quantum Electronics: Lasers: Physics and Applications, 1996, Varna, Bulgaria
Abstract
This work summarized the results of XeCl excimer laser ablation deposition procedure of Ti-doped sapphire thin films. Three types of targets are utilized-monocrystalline and two different ceramics synthesized in vacuum and H2 ambient. The influence of the target's type in the film quality is studied. The films are investigated by XRD and SEM, as well as by optical methods. Optical emission measurements of laser ablated plumes are performed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter A. Atanasov, Rumen I. Tomov, Anna O. Dikovska, Zdravka I. Aneva, Vasilka Tsaneva, and Zahari Y. Peshev "Preparation of Ti:sapphire thin films on sapphire substrates by XeCl excimer laser ablation", Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); https://doi.org/10.1117/12.262953
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KEYWORDS
Thin films

Ceramics

Laser ablation

Sapphire

Excimer lasers

Scanning electron microscopy

Thin film deposition

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