Preparation and application in gas detection of rutile oxide semiconductors

Katarzyna Zakrzewska; Marta Radecka; Pawel Sobas

doi:10.1117/12.266705

13 February 1997 Preparation and application in gas detection of rutile oxide semiconductors

Katarzyna Zakrzewska, Marta Radecka, Pawel Sobas

Proceedings Volume 3054, Optoelectronic and Electronic Sensors II; (1997) https://doi.org/10.1117/12.266705
Event: Optoelectronic and Electronic Sensors II, 1996, Szczyrk, Poland

Abstract

TiO₂-SnO₂ polycrystalline ceramics were prepared by precipitation from SnCl₄ and impregnation of TiO₂ powder. Thin films were produced by rf reactive sputtering from Ti-Sn metallic target in the Ar+15%O₂ reactive gas mixture. The influence of the system composition on gas sensing performance was investigated. The electrical resistance was measured as a function of hydrogen and methane activity in air at different temperatures between 600 K and 1200 K.

Citation Download Citation

Katarzyna Zakrzewska, Marta Radecka, and Pawel Sobas "Preparation and application in gas detection of rutile oxide semiconductors", Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); https://doi.org/10.1117/12.266705

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