Electrical behavior of laser damaged silicon photodiodes

Jean-Pierre Moeglin; Bernard Gautier; Rene C. Joeckle

doi:10.1117/12.270159

4 April 1997 Electrical behaviour of laser-damaged silicon photodiodes

Jean-Pierre Moeglin, Bernard Gautier, Rene C. Joeckle

Proceedings Volume 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference; (1997) https://doi.org/10.1117/12.270159
Event: XI International Symposium on Gas Flow and Chemical Lasers and High Power Laser Conference, 1996, Edinburgh, United Kingdom

Abstract

A measurement of the electrical parameters degradation of Si photodiodes irradiated by laser visible light has been performed. The laser is a q-switched Nd:YAG, frequency doubled, operated in single pulse mode of 4 ns duration. The applied fluence levels range up to 90 J/cm². Two kinds of irradiation process have been applied: either a part of the detector active area has been irradiated in single pulse mode, or a scanning of the whole detector active area has been performed with successive identical pulses. It has been shown that the fluence necessary to induce significant changes (local decrease of 35%) in responsivity is several times the surface melting threshold fluence (0.5 J/cm²). Conversely, the dark current is the most sensitive parameter, it increases by about four magnitudes for high irradiation. The in-depth dopant distribution is altered by high fluence irradiation in a way that cannot be explained by simple thermal modelization.

Citation Download Citation

Jean-Pierre Moeglin, Bernard Gautier, and Rene C. Joeckle "Electrical behaviour of laser-damaged silicon photodiodes", Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); https://doi.org/10.1117/12.270159

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