Photodiodes for high-frequency applications implemented in CMOS and BiCMOS processes

Pasi J. M. Palojaervi; Tarmo Ruotsalainen; Juha Tapio Kostamovaara; Grigory S. Simin

doi:10.1117/12.287732

25 September 1997 Photodiodes for high-frequency applications implemented in CMOS and BiCMOS processes

Pasi J. M. Palojaervi, Tarmo Ruotsalainen, Juha Tapio Kostamovaara, Grigory S. Simin

Proceedings Volume 3100, Sensors, Sensor Systems, and Sensor Data Processing; (1997) https://doi.org/10.1117/12.287732
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany

Abstract

In this paper the high frequency behavior of integrated pn- photodiodes is discussed and measurement results of two different types of photodiodes, one implemented in a standard 1.2 micrometers BiCMOS process and the other in a 0.8 micrometers CMOS process are presented. The rise times and responsivities of the photodiodes are under 5 ns and 0.26 A/W in the CMOS process and about 30 ns and 0.23 A/W in the BiCMOS process, respectively. Furthermore, the suitability of the technique for 3D vision has been investigated by designing an array of photodetectors and measuring the isolation between detector blocks.

Citation Download Citation

Pasi J. M. Palojaervi, Tarmo Ruotsalainen, Juha Tapio Kostamovaara, and Grigory S. Simin "Photodiodes for high-frequency applications implemented in CMOS and BiCMOS processes", Proc. SPIE 3100, Sensors, Sensor Systems, and Sensor Data Processing, (25 September 1997); https://doi.org/10.1117/12.287732

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