Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact

Gang Shi; Zhen Sun; Geng-Fu Xu; Yun-Hao Min; Jun-Yi Luo; Yong Lu; Bing-Zong Li; Xin-Ping Qu; Gang Qian; My The Doan; Edmund Lee

doi:10.1117/12.300685

20 February 1998 Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact

Gang Shi, Zhen Sun, Geng-Fu Xu, Yun-Hao Min, Jun-Yi Luo, Yong Lu, Bing-Zong Li, Xin-Ping Qu, Gang Qian, My The Doan, Edmund Lee

Author Affiliations +

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300685
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

In this study, two different processes, with and without rapid thermal annealing (RTA), have been compared for the Al-Si- Cu/TiN/Ti multilayer contact on n+ diffusions. A series of wafer level reliability (WLR) measurement performed on a test structure with two 1.08 X 1.08 micrometer² contacts on n+ diffusion. The results show that RTA can increase contact electromigration (EM) lifetime dramatically. The XRD, AES and TEM analysis indicate that this improvement is attributed to oxygen stuffing in TiN, phase change of TiN and TiSi₂ formation at the interface of Ti and Si.

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Gang Shi, Zhen Sun, Geng-Fu Xu, Yun-Hao Min, Jun-Yi Luo, Yong Lu, Bing-Zong Li, Xin-Ping Qu, Gang Qian, My The Doan, and Edmund Lee "Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300685

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