MBE technology and semiconductor laser material growth

Guo-Jun Liu; Qianyong Zhang; Han Yang; Xingde Zhang; Xueqian Li; Yi Qu; Xiaowei Song; Xiaohua Wang

doi:10.1117/12.300715

20 February 1998 MBE technology and semiconductor laser material growth

Guo-Jun Liu, Qianyong Zhang, Han Yang, Xingde Zhang, Xueqian Li, Yi Qu, Xiaowei Song, Xiaohua Wang

Author Affiliations +

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300715
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

This paper summarizes the technical characteristics and performance of our newly purchased VG V80H MBE system. Our research work on thin film semiconductor laser materials growth on this system has also been presented here, with some discussion on beam flux stability and growth uniformity et al.

Citation Download Citation

Guo-Jun Liu, Qianyong Zhang, Han Yang, Xingde Zhang, Xueqian Li, Yi Qu, Xiaowei Song, and Xiaohua Wang "MBE technology and semiconductor laser material growth", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300715

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